位置:M2V56S20ATP-8 > M2V56S20ATP-8详情
M2V56S20ATP-8中文资料
M2V56S20ATP-8数据手册规格书PDF详情
DESCRIPTION
M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in computer systems
FEATURES
- Single 3.3v±0.3V power supply
- Max. Clock frequency 100MHz(-7/-8), 133MHz (-6)
- Fully Synchronous operation referenced to clock rising edge
- Single Data Rate
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/full page (programmable)
- Burst type- sequential / interleave (programmable)
- Random column access
- Auto precharge / All bank precharge controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
M2V56S20ATP-8产品属性
- 类型
描述
- 型号
M2V56S20ATP-8
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
256M Synchronous DRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MITSUBISHI |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
|||
MITSUBISHI/三菱 |
23+ |
QFP |
50000 |
全新原装正品现货,支持订货 |
|||
MITSUBISHI/三菱 |
24+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MIT |
TSOP-54 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MIT |
2402+ |
TSOP-54 |
8324 |
原装正品!实单价优! |
|||
MIT |
24+ |
QFP |
23000 |
只做正品原装现货 |
|||
ESNT |
2020+ |
TSOP |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
MITSUMI |
1733+ |
TSOP54 |
6528 |
只做进口原装正品假一赔十! |
|||
MIT |
2015+ |
QFP |
19889 |
一级代理原装现货,特价热卖! |
|||
MIT |
24+/25+ |
1000 |
原装正品现货库存价优 |
M2V56S20ATP-8 资料下载更多...
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