位置：首页 > IC中文资料第41页 > M29W800AB1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 |   | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 文件：717.83 Kbytes Page：40 Pages | STMICROELECTRONICS 意法半导体 | |
M29W800AB1产品属性
- 类型
描述
- 型号
M29W800AB1
- 功能描述
闪存 SO-44 1MX8 512KX16
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
4048 |
原装现货,当天可交货,原型号开票 |
|||
ST |
23+ |
SOP |
16900 |
正规渠道,只有原装! |
|||
ST |
2025+ |
TSOP48 |
3750 |
全新原厂原装产品、公司现货销售 |
|||
ST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
ST |
26+ |
SOP |
60000 |
只有原装 可配单 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
STM |
25+23+ |
SOP |
27106 |
绝对原装正品全新进口深圳现货 |
|||
ST |
24+ |
9850 |
公司原装现货/随时可以发货 |
||||
STM |
05+ |
原厂原装 |
4570 |
只做全新原装真实现货供应 |
|||
ST/意法 |
23+ |
TSOP |
7780 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
M29W800AB1芯片相关品牌
M29W800AB1规格书下载地址
M29W800AB1参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2FM3
- M2FL20U
- M2FH3
- M2F60
- M2EC_15
- M2E_15
- M2D810
- M2D2428
- M2D2025
- M2D1822
- M2D160
- M2BJ-BH
- M2BJ-B
- M2BC_15
- M2B_15
- M2AS1
- M2AMS2
- M2AMS
- M2ADS
- M2AC_15
- M29W800AT90M1
- M29W800AT80N1
- M29W800AT120ZA6
- M29W800AT120N6
- M29W800AT120N1
- M29W800AT120M1
- M29W800AT100N1
- M29W800AB90N6
- M29W800AB90N1T
- M29W800AB90N1
- M29W800AB90M1
- M29W800AB80N1
- M29W800AB120ZA6
- M29W800AB120N6
- M29W800AB-120N1
- M29W800AB120N1
- M29W800AB120M1
- M29W800AB100N6
- M29W800AB100N1
- M29W800AB100M1
- M29W641DU90ZA6
- M29W641DL90N6
- M29W641DH90N6
- M29W640GT90NA6E
- M29W640GT90N6E
- M29W640GT7AN6F TR
- M29W640GT7AN6F
- M29W640GT7AN6E
- M29W640GT70ZS6F TR
- M29W640GT70ZS6F
- M29W640GT70ZS6E
- M29W640GT70ZF6E
- M29W640GT70ZA6F TR
- M29W640GT70ZA6F
- M29W640GT70ZA6EP
- M29W640GT70ZA6E
- M29W640GT70NB6E
- M29W640GT70NA6F TR
- M29W640GT70NA6F
- M29W640GT70NA6E
- M29W400
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
M29W800AB1数据表相关新闻
M2S010-TQG144
ARM® Cortex®-M3 嵌入式 - 片上系统 (SoC) IC SmartFusion®2 FPGA - 10K 逻辑模块 166MHz 144-TQFP（20x20）
2024-1-4M2GL150-FCVG484I
进口代理
2022-10-8M29W320ET70N6E 假一罚十
原装正品 欢迎来电咨询！
2020-12-9M29W256GH70N6E公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-6-10M29W160ET-70N6公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-6-10M29W800DT70N6E天芯科技优势渠道积累-货源稳定-价格优势
深圳市天芯半导体科技有限公司 0755-82725660 17727837185（微信75056055） QQ：177691499
2019-2-26
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
