型号 功能描述 生产厂家 企业 LOGO 操作
M29W400T-120M1R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally

STMICROELECTRONICS

意法半导体

更新时间:2026-2-8 11:44:00
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26+
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