M29W160EB价格

参考价格:¥6.0120

型号:M29W160EB70N6E 品牌:MICRON 备注:这里有M29W160EB多少钱,2025年最近7天走势,今日出价,今日竞价,M29W160EB批发/采购报价,M29W160EB行情走势销售排行榜,M29W160EB报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M29W160EB

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M29W160EB

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:813.7 Kbytes Page:42 Pages

NUMONYX

numonyx

NUMONYX

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Eisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 16MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 16MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

文件:1.03193 Mbytes Page:40 Pages

NUMONYX

numonyx

NUMONYX

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M29W160EB产品属性

  • 类型

    描述

  • 型号

    M29W160EB

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit(2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

更新时间:2025-5-18 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TSSOP48
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST/美光
24+
BGA48
89758
专做存储芯片原装现货
23+
17ROHS
562
原装正品--可开增值税发票量大可订货
ST/意法
25+
NA
880000
明嘉莱只做原装正品现货
ST
25+23+
BGA
42965
绝对原装正品全新进口深圳现货
ST
22+
TSOP48
3000
原装正品,支持实单
ST
23+
TSSOP
4500
全新原装、诚信经营、公司现货销售!
MICRON
24+
TSOP48
8950
BOM配单专家,发货快,价格低
ST MICRO
0437
96
公司优势库存 热卖中!
MICRON/美光
2404+
BGA
3300
现货正品原装,假一赔十

M29W160EB芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

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