型号 功能描述 生产厂家 企业 LOGO 操作
M29W040B

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. The interface is directly compatible with most microprocessors. PLCC32, TSOP32(8 x 20mm)and TSOP32 (8 x 14mm) packages are available. Both normal and reverse pin outs

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

M29W040B产品属性

  • 类型

    描述

  • 型号

    M29W040B

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

更新时间:2026-1-27 18:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
PLCC32
68500
一级代理 原装正品假一罚十价格优势长期供货
ST
24+
PLCC
35200
一级代理/放心采购
ST
05+
原厂原装
4351
只做全新原装真实现货供应
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
25+
标准封装
18000
原厂直接发货进口原装
ST
25+
PLCC32
3200
全新原装、诚信经营、公司现货销售!
ST/意法
25+
PLCC
13800
原装,请咨询
ST
26+
PLCC-32
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
25+23+
PLCC
35572
绝对原装正品全新进口深圳现货
ST/意法
2025+
PLCC
4950
原装进口价格优 请找坤融电子!

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