型号 功能描述 生产厂家 企业 LOGO 操作
M29W040B

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. The interface is directly compatible with most microprocessors. PLCC32, TSOP32(8 x 20mm)and TSOP32 (8 x 14mm) packages are available. Both normal and reverse pin outs

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

M29W040B产品属性

  • 类型

    描述

  • 型号

    M29W040B

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

更新时间:2025-11-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
PLCC32
100000
代理渠道/只做原装/可含税
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST/意法
25+
PLCC
54648
百分百原装现货 实单必成 欢迎询价
ST
24+
PLCC32L
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST
20+
PLCC32
19570
原装优势主营型号-可开原型号增税票
ST
03+
TSOP32
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Numonyx
2450+
PLCC32
6885
只做原装正品假一赔十为客户做到零风险!!
ST
25+
标准封装
18000
原厂直接发货进口原装
STMicrotronics
23+
NA
647
专做原装正品,假一罚百!
ST
24+
TSSOP
19600
常备大量现货,原装正品

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