型号 功能描述 生产厂家 企业 LOGO 操作
M29W040B

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. The interface is directly compatible with most microprocessors. PLCC32, TSOP32(8 x 20mm)and TSOP32 (8 x 14mm) packages are available. Both normal and reverse pin outs

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

M29W040B产品属性

  • 类型

    描述

  • 型号

    M29W040B

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

更新时间:2026-1-28 13:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2025+
PLCC
4950
原装进口价格优 请找坤融电子!
ST/意法
2402+
PLCC32
8324
原装正品!实单价优!
ST/意法
25+
PLCC
13800
原装,请咨询
ST
26+
PLCC-32
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
23+
PLCC
8560
受权代理!全新原装现货特价热卖!
ST/意法
23+
PLCC32
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
Numonyx
2450+
PLCC32
6885
只做原装正品假一赔十为客户做到零风险!!
ST
23+
PLCC32
8000
只做原装现货
ST
2447
PLCC
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST
25+
PLCC-32
2987
只售原装自家现货!诚信经营!欢迎来电!

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