位置：首页 > IC中文资料第11732页 > M29W040B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W040B | 4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W040isanon-volatilememorythatmaybeerasedelectricallyattheblocklevel,andprogrammedByte-by-Byte. Theinterfaceisdirectlycompatiblewithmostmicroprocessors.PLCC32,TSOP32(8x20mm)andTSOP32(8x14mm)packagesareavailable.Bothnormalandreversepinouts | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit512Kbx8,UniformBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M29W040B产品属性
- 类型
描述
- 型号
M29W040B
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
21+ |
PLCC32 |
37 |
原装现货。假一赔十 |
|||
ST |
2016+ |
PLCC-32 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
2020+ |
PLCC-32 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST/意法 |
22+ |
PLCC32 |
10000 |
公司原装现货,欢迎咨询 |
|||
ST/意法 |
22+ |
PLCC32 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST |
20+ |
PLCC32 |
19570 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
PLCC32L |
20000 |
原厂原装正品现货 |
|||
ST/意法 |
24+ |
PLCC32 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ST |
22+ |
TSOP |
6980 |
原装现货,可开13%税票 |
|||
ST |
23+ |
标准封装 |
18000 |
M29W040B芯片相关品牌
M29W040B规格书下载地址
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M29W040B数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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