型号 功能描述 生产厂家 企业 LOGO 操作
M29F800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

M29F800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 8MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 8MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 8M PARALLEL 48TSOP

Micron

美光

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

IC FLASH 8M PARALLEL 44SO

Micron

美光

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

IC FLASH 8M PARALLEL 48TSOP

Micron

美光

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

M29F800DB产品属性

  • 类型

    描述

  • 型号

    M29F800DB

  • 功能描述

    闪存 SO-44 1MX8/512KX16

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-12-26 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
317
优势代理渠道,原装正品,可全系列订货开增值税票
ST
2016+
SOP-44
2500
只做原装,假一罚十,公司可开17%增值税发票!
ST
23+
TSOP48
20000
全新原装假一赔十
ST/意法
25+
TSOP
54648
百分百原装现货 实单必成 欢迎询价
SPANSION
0501+
No
90
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
25+
TSSOP-48
2987
只售原装自家现货!诚信经营!欢迎来电!
SGS
23+
NA
1930
专做原装正品,假一罚百!
25+23+
原厂原包
24221
绝对原装正品现货,全新深圳原装进口现货
ST
TSOP48
3500
一级代理 原装正品假一罚十价格优势长期供货

M29F800DB数据表相关新闻