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M29F800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

M29F800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 8MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 8M PARALLEL 48TSOP

MICRON

美光

IC FLASH 8M PARALLEL 48TSOP

MICRON

美光

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 8MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ETC

知名厂家

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

IC FLASH 8M PARALLEL 44SO

MICRON

美光

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

文件:420.24 Kbytes Page:53 Pages

STMICROELECTRONICS

意法半导体

M29F800DB产品属性

  • 类型

    描述

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    8Mb (1M x 8,512K x 16)

  • 写周期时间 - 字,页:

    55ns

  • 访问时间:

    55ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    4.5V ~ 5.5V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    48-TFSOP(0.724\,18.40mm 宽)

  • 供应商器件封装:

    48-TSOP

更新时间:2026-5-24 23:00:00
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micron(镁光)
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样件支持,可原厂排单订货!
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正规渠道,免费送样。支持账期,BOM一站式配齐
ST
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只做原装,假一罚十,公司可开17%增值税发票!
25+23+
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绝对原装正品现货,全新深圳原装进口现货
Micron Technology Inc.
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全新原厂原装现货!受权代理!可送样可提供技术支持!
24+
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公司存货
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进口原装现货/价格优势!
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诚信交易大量库存现货
ST
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公司只有原装 欢迎来电咨询。

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