位置：首页 > IC中文资料第80页 > M29F200B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F200B | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 |   | |
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | Micron 美光 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | |
M29F200B产品属性
- 类型
描述
- 型号
M29F200B
- 功能描述
闪存 RO 511-M29F200BB70M
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
0027+ |
SSOP-48 |
747 |
原装现货海量库存欢迎咨询 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
24+ |
SOP |
30617 |
ST一级地代理商原装进口现货 |
|||
ST |
25+ |
SOP44 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
23+ |
TSOP-48 |
5000 |
原装正品,假一罚十 |
|||
ST |
SOP |
130 |
正品原装--自家现货-实单可谈 |
||||
ST |
05+ |
原厂原装 |
147 |
全新原装 绝对有货 |
|||
ST/意法 |
24+ |
SOP8 |
9600 |
原装现货,优势供应,支持实单! |
|||
STMicroelectronics |
18+ |
ICFLASH2MBIT50NS48TSOP |
6800 |
公司原装现货 |
M29F200B芯片相关品牌
M29F200B规格书下载地址
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- M29F160FT5AN6F2
- M29F160FT5AN6E2
- M29F160FT55N3F2 TR
- M29F160FT55N3F2
- M29F160FT55N3E2
- M29F160FB5AN6F2 TR
- M29F160FB5AN6F2
- M29F160FB5AN6E2
- M29F160FB55N3F2 TR
- M29F160FB55N3F2
- M29F160FB55N3E2
- M29F160BT70N1
- M29F160
- M29F102BB70N1
- M29F102BB45N1
- M29F102BB-45K1
- M29F102BB45K1
- M29F102BB35N1
- M29F102BB35K1
- M29F102B45K1
- M29F100T-90M1
- M29F100
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
M29F200B数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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