M29F200价格
参考价格：￥17.6698
型号：M29F200FB55N3E2 品牌：MIC 备注：这里有M29F200多少钱，2026年最近7天走势，今日出价，今日竞价，M29F200批发/采购报价，M29F200行情走势销售排行榜，M29F200报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F200 | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 |   | |
M29F200 | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | |
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | MICRON 美光 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | |
M29F200产品属性
- 类型
描述
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
2Mb （256K x 8，128K x 16）
- 写周期时间 - 字，页：
45ns
- 访问时间：
45ns
- 存储器接口：
并联
- 电压 - 电源：
4.5 V ~ 5.5 V
- 工作温度：
0°C ~ 70°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
48-TFSOP（0.724\，18.40mm 宽）
- 供应商器件封装：
48-TSOP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
25+ |
TSOP |
576 |
原装现货 |
|||
Micron(镁光) |
25+ |
TSOP-48 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST |
19+ |
TSOP48 |
12500 |
||||
MICRON/美光 |
17+ |
明嘉莱只做原装正品现货 |
2510000 |
TSOP48 |
|||
MICRON |
25+ |
TSOP |
6800 |
全新原装公司现货低价 |
|||
ST/意法 |
25+ |
TSOP48 |
32360 |
ST/意法全新特价M29F200FB5AN6即刻询购立享优惠#长期有货 |
|||
MICROM |
2425+ |
TSOP-48 |
18800 |
只做原装正品,每一片都来自原厂 |
|||
MICRON/美光 |
21+ |
SOP |
7000 |
正品渠道现货,终端可提供BOM表配单。 |
|||
ST/意法 |
0446+ |
SOP44 |
51 |
原装正品 可含税交易 |
|||
MICRON/美光 |
2021+ |
TSOP48 |
9000 |
原装现货,随时欢迎询价 |
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- M29F400FT55N3F2
- M29F400FT55N3E2
- M29F400FB5AN6E2
- M29F400FB55N3F2
- M29F400FB55N3E2
- M29F400FB55M3E2
- M29F400
- M29F200FT5AN6E2
- M29F200FT55N3E2
- M29F200FB55N3F2
- M29F200FB55N3E2
- M29F160FB5AN6F2
- M29F160FB5AN6E2
- M29F160FB55N3E2
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M29DW323DT70ZE6E
- M29DW323DT70N6E
- M29DW323DB70ZE6E
- M29DW323DB70N6F
- M29DW323DB70N6E
- M29DW256G70ZA6E
- M29DW256G70NF6E
- M29DW128G70NF6E
- M29DW127G70NF6E
- M-299-WHT
- M295A601632
- M2954
- M2951
- M29504/5-4046
- M29504/4-4040
- M29504/14-4132
- M29504/05-4046
- M2950
- M293B1
- M293366
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640HST70ZA6E
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
M29F200数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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