位置：首页 > IC中文资料第6958页 > M29DW128F60ZA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1 | STMICROELECTRONICS 意法半导体 |   | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1 | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1 | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1 | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1 | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1 | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1 | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1 | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX | | ||
封装/外壳：64-TBGA 包装：管件 描述：IC FLASH 128MBIT PARALLEL 64TBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX | |
M29DW128F60ZA产品属性
- 类型
描述
- 型号
M29DW128F60ZA
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
FBGA |
16900 |
正规渠道,只有原装! |
|||
STM |
BGA64 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST/PBF |
24+ |
TSSOP |
880000 |
明嘉莱只做原装正品现货 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
26+ |
FBGA |
60000 |
只有原装 可配单 |
|||
ST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
ST |
2025+ |
TSOP |
3785 |
全新原厂原装产品、公司现货销售 |
|||
ST |
16+ |
BGA |
2500 |
进口原装现货/价格优势! |
|||
ST |
2023+ |
TSSOP |
5800 |
进口原装,现货热卖 |
|||
Micron |
22+ |
64TBGA |
9000 |
原厂渠道,现货配单 |
M29DW128F60ZA芯片相关品牌
M29DW128F60ZA规格书下载地址
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M29DW128F60ZA数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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