位置：首页 > IC中文资料第1956页 > M28W800BB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W800BB | 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 |   | |
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | |
M28W800BB产品属性
- 类型
描述
- 型号
M28W800BB
- 功能描述
闪存 8M(512Kx16) 70ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TSOP |
4500 |
原装正品!公司现货!欢迎来电! |
|||
ST |
24+ |
9850 |
公司原装现货/随时可以发货 |
||||
ST |
24+ |
TSOP |
20000 |
低价现货抛售(美国 香港 新加坡) |
|||
ST |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
2025+ |
TSOP |
3625 |
全新原厂原装产品、公司现货销售 |
|||
STM; |
23+24 |
TSOP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
ST |
1824+ |
TSOP |
4850 |
原装现货专业代理,可以代拷程序 |
|||
ST |
24+ |
TSOP48 |
557 |
||||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
25+ |
TSOP |
576 |
只做原装进口!正品支持实单! |
M28W800BB芯片相关品牌
M28W800BB规格书下载地址
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M28W800BB数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
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深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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