型号 功能描述 生产厂家 企业 LOGO 操作
M28W160ECT70ZB6S

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

M28W160ECT70ZB6S

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

M28W160ECT70ZB6S产品属性

  • 类型

    描述

  • 型号

    M28W160ECT70ZB6S

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

更新时间:2025-10-7 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+23+
BGA
54379
绝对原装正品现货,全新深圳原装进口现货
ST/
24+
BGA46
5000
全新原装正品,现货销售
Micron
17+
6200
SST
原厂封装
9800
原装进口公司现货假一赔百
MICRON/美光
23+
9920
原装正品,支持实单
ST/意法
25+
NA
880000
明嘉莱只做原装正品现货
ST
25+
BGA
5956
N/A
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
STMicroelectronics
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
Numonyx/STMi
23+
46-TFBGA
65480

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