位置：首页 > IC中文资料第6476页 > M28W160ECT70N1S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160ECT70N1S | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
M28W160ECT70N1S | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYX numonyx |  | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYX numonyx | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYX numonyx | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYX numonyx | | |
M28W160ECT70N1S产品属性
- 类型
描述
- 型号
M28W160ECT70N1S
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
04+ |
TSSOP |
6800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
24+ |
NA/ |
8050 |
原装现货,当天可交货,原型号开票 |
|||
ST |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ST |
2016+ |
BGA |
6528 |
只做进口原装现货!或者订货,假一赔十! |
|||
ST |
20+ |
QFN |
20500 |
汽车电子原装主营-可开原型号增税票 |
|||
ST |
TSSOP48 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
17+ |
46-TFBGA |
6200 |
100%原装正品现货 |
|||
ST/意法 |
22+ |
BGA |
25000 |
只做原装,一站式BOM配单,假一罚十 |
|||
NUMONYX |
25+ |
BGA46 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
23+ |
TSSOP |
9800 |
全新原装现货,假一赔十 |
M28W160ECT70N1S芯片相关品牌
M28W160ECT70N1S规格书下载地址
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DdatasheetPDF页码索引
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