位置：首页 > IC中文资料第11731页 > M28F256
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28F256 | 256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 |   | |
M28F256 | 256K(32K x8, Chip Erase)FLASH MEMORY | STMICROELECTRONICS 意法半导体 | | |
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | | ||
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | |
M28F256产品属性
- 类型
描述
- 型号
M28F256
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
256K(32K x8, Chip Erase)FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
26+ |
PLCC |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
93+ |
PLCC |
32 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
2015+ |
DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
ST |
25+23+ |
PLCC |
40558 |
绝对原装正品全新进口深圳现货 |
|||
ST |
25+ |
DIP32 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
ST |
22+ |
PLCC |
3000 |
原装正品,支持实单 |
|||
ST |
25+ |
PLCC |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST/意法 |
2025+ |
PLCC |
4000 |
原装进口价格优 请找坤融电子! |
|||
ST |
23+ |
PLCC32 |
16900 |
正规渠道,只有原装! |
|||
STM |
25+ |
35 |
公司优势库存 热卖中! |
M28F256芯片相关品牌
M28F256规格书下载地址
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