位置：首页 > IC中文资料第9400页 > M28256
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28256 | 256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 |   | |
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | | ||
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep | STMICROELECTRONICS 意法半导体 | |
M28256产品属性
- 类型
描述
- 型号
M28256
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
PLCC |
20000 |
原装，请咨询 |
|||
ST |
TSOP28 |
49 |
全新原装进口自己库存优势 |
||||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ST |
26+ |
PLCC32 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
99+ |
SOP28 |
278 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+23+ |
SOP-28 |
36570 |
绝对原装正品全新进口深圳现货 |
|||
ST |
23+ |
NA |
1163 |
专做原装正品,假一罚百! |
|||
ST |
25+ |
SO-20 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
25+ |
SOP-28 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST/意法 |
2025+ |
PLCC |
2500 |
原装进口价格优 请找坤融电子! |
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2020-12-30M27C512-15F1 储存器 代理渠道 ，进口原装
M27C512-15F1 代理渠道 ，进口原装
2020-10-29M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
DdatasheetPDF页码索引
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