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型号	功能描述	生产厂家企业	LOGO
M28256	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12BS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12BS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12KA1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12KA6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12MS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12MS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12NS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12NS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12WBS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12WBS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12WKA1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12WKA6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12WMS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12WMS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12WNS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-12WNS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15BS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15BS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15KA1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15KA6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15MS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15MS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15NS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15NS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15WBS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15WBS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15WKA1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15WKA6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15WMS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15WMS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15WNS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-15WNS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20BS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20BS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20KA1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20KA6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20MS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20MS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20NS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20NS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20WBS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20WBS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20WKA1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20WKA6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20WMS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20WMS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20WNS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-20WNS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25BS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25BS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25KA1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25KA6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25MS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25MS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25NS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25NS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25WBS1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25WBS6T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28256-25WKA1T	256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection DESCRIPTION The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, dep	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

M28256产品属性

类型
描述
型号
M28256
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

M28256供应商更多...

更新时间：2025-11-21 18:33:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	M28256-15WMS6/SP	ST	99+	SOP28	278	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市振宏微科技有限公司	M28256-15WNS6T	ST	23+	NA	1163	专做原装正品,假一罚百!	询价
深圳市赛特兴科技有限公司	M28256	ST	23+	PLCC	16900	正规渠道,只有原装!	询价
深圳市毅创腾电子科技有限公司	M28256-156	ST	23+	TSSOP-28	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市盈慧通电子有限公司	M28256	ST	2511	PLCC	16900	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市科芯源微电子有限公司	M28256-15W6	ST/意法	25+	SOP28	54658	百分百原装现货实单必成	询价
深圳市恒达亿科技有限公司	M28256-126	ST	25+	SOP-28	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市昌和盛利电子有限公司	M28256-906	ST	NEW	PLCC32	8795	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
深圳市得捷芯城科技有限公司	M28256-15W6	ST/意法	24+	NA/	631	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市华斯顿科技有限公司	M28256-12WKA6	ST	25+23+	SOP-28	36570	绝对原装正品全新进口深圳现货	询价

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M28256芯片相关品牌

M28256规格书下载地址

M28256参数引脚图相关

M28256数据表相关新闻

M28W160ECB70ZB6 ST/Micron

M25UFG 全套的高压二极管

M25P40-VMN6TPB 假一罚十

M27C512-15F1 储存器 代理渠道 ，进口原装

M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123

M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格

DdatasheetPDF页码索引

M27C512-15F1 储存器代理渠道，进口原装