位置:首页 > IC中文资料 > M25PE80-VMN6TPBA

型号 功能描述 生产厂家 企业 LOGO 操作
M25PE80-VMN6TPBA

Serial NOR Flash

MICRON

美光

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:托盘 描述:IC FLASH 8MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ETC

知名厂家

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

STMICROELECTRONICS

意法半导体

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

STMICROELECTRONICS

意法半导体

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated

NUMONYX

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

STMICROELECTRONICS

意法半导体

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

STMICROELECTRONICS

意法半导体

M25PE80-VMN6TPBA产品属性

  • 类型

    描述

  • Density:

    8Mb

  • FBGA Code:

    N/A

  • Media:

    Tape & Reel

  • Op. Temp.:

    -40C to +85C

  • Part Family:

    M25PE

  • Part Status:

    End of Life

  • PLP:

    No

  • PLP Start Date:

    N/A

  • Type:

    Page Erase

  • Width:

    x1

更新时间:2026-5-20 19:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
19+
SOP4
659
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Micron Technology Inc.
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
25+
SOP4
20000
原装
MERLOTLAB
25+
QFN
30000
房间原装现货特价热卖,有单详谈
MERLOTLAB
2450+
QFN
8850
只做原装正品假一赔十为客户做到零风险!!
MERLOTLAB
25+
QFN
880000
明嘉莱只做原装正品现货
MERLOTLAB
23+
QFN
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
Micron
17+
6200
SSOUSA
25+
SOP4
20000
全新原装正品支持含税
SSOUSA
2025+
SOP4
3565
全新原厂原装产品、公司现货销售

M25PE80-VMN6TPBA芯片相关品牌

M25PE80-VMN6TPBA数据表相关新闻