位置:首页 > IC中文资料第7996页 > M213FGN

型号 功能描述 生产厂家 企业 LOGO 操作
M213FGN

5x7 mm, 3.3 Volt, HCMOS/TTL Compatible Output, Clock Oscillator

文件:283.82 Kbytes Page:2 Pages

MTRONPTI

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

MOTOROLA

摩托罗拉

丝印代码:D213;DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

MOTOROLA

摩托罗拉

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

1024- 횞 512-pixel ccd image sensor

文件:325.65 Kbytes Page:21 Pages

TI

德州仪器

M213FGN产品属性

  • 类型

    描述

  • 型号

    M213FGN

  • 制造商

    MTRONPTI

  • 制造商全称

    MTRONPTI

  • 功能描述

    5x7 mm, 3.3 Volt, HCMOS/TTL Compatible Output, Clock Oscillator

M213FGN数据表相关新闻