Memory Micromodules General Information for D1, D2 and C Packaging

DESCRIPTION Memory Cards consist of two main parts: the plastic card, and the embedded Micromodule (which, in turn, carries the silicon chip). ■ Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: – Support for the chi

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Micromodules General Information for D1, D2 and C Packaging

M14C04 Die Description

PRODUCT M14C04 ■ WAFER SIZE 152 mm (6 inches) ■ DIE IDENTIFICATION M14C04KA_R ■ DIE SIZE (X x Y) 1465 x 1585 µm ■ SCRIBE LINE 101.6 x 101.6 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT ■ DI

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

Memory Card IC 16/4 Kbit Serial I짼C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

M14C04 Die Description

Memory Card IC 16/4 Kbit Serial I²C Bus EEPROM