Description

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features

• Voltage Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area

• Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• AEC-Q101 Qualified