型号 功能描述 生产厂家 企业 LOGO 操作
LY621

BLUE OVAL LAMP LED

Description Lamp LEDs are effective in hot thermal and humid condition. This high brightness and weather-resistant packaging design makes these Lamp LEDs ideal for Outdoor applications such as traffic signals, variable message signs and backlighting for transparent sign panels. • Non-standoff le

SEOUL

首尔半导体

LY621

CYAN LAMP LED

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首尔半导体

LY621

INFRARED LAMP LED

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首尔半导体

LY621

RED LAMP LED

文件:378.31 Kbytes Page:14 Pages

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首尔半导体

LY621

BLUE OVAL LAMP LED

文件:390.41 Kbytes Page:14 Pages

SEOUL

首尔半导体

LY621

Infrared LAMP LED

文件:285.42 Kbytes Page:13 Pages

SEOUL

首尔半导体

LY621

RED OVAL LAMP LED

文件:392.32 Kbytes Page:14 Pages

SEOUL

首尔半导体

LY621

RED OVAL LAMP LED

文件:392.32 Kbytes Page:14 Pages

SEOUL

首尔半导体

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

LYONTEK

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

LYONTEK

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

LYONTEK

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

LYONTEK

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

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128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

LYONTEK

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

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128K X 8 BIT LOW POWER CMOS SRAM

文件:346.55 Kbytes Page:16 Pages

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128K X 8 BIT LOW POWER CMOS SRAM

文件:908.49 Kbytes Page:20 Pages

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Low Power SRAM

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LY621产品属性

  • 类型

    描述

  • 型号

    LY621

  • 制造商

    SEOUL

  • 制造商全称

    Seoul Semiconductor

  • 功能描述

    BLUE OVAL LAMP LED

更新时间:2026-1-27 18:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LYONTEK
21+
SOP32
1568
10年芯程,只做原装正品现货,欢迎加微信垂询!
LY
24+
SOT23-5
593428
电源IC原装正品有优势
LYONTEK
DIP32
53650
一级代理 原装正品假一罚十价格优势长期供货
LYONTEK
23+
SOP32
3000
原装正品假一罚百!可开增票!
LYONTEK
24+
SMD
20000
一级代理原装现货假一罚十
LYONTEK
25+
SOP32
30000
房间原装现货特价热卖,有单详谈
LYONTEK
26+
SOP
86720
全新原装正品价格最实惠 承诺假一赔百
LYONTEK
2025+
SOP-32
3685
全新原厂原装产品、公司现货销售
LYONTEK
25+23+
SOP
19123
绝对原装正品全新进口深圳现货
LYONTEK
22+
SOP-32
3000
原装正品,支持实单

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