型号 功能描述 生产厂家 企业 LOGO 操作
LY621

BLUE OVAL LAMP LED

Description Lamp LEDs are effective in hot thermal and humid condition. This high brightness and weather-resistant packaging design makes these Lamp LEDs ideal for Outdoor applications such as traffic signals, variable message signs and backlighting for transparent sign panels. • Non-standoff le

SEOUL

首尔半导体

LY621

CYAN LAMP LED

SEOUL

首尔半导体

LY621

INFRARED LAMP LED

SEOUL

首尔半导体

LY621

RED LAMP LED

文件:378.31 Kbytes Page:14 Pages

SEOUL

首尔半导体

LY621

BLUE OVAL LAMP LED

文件:390.41 Kbytes Page:14 Pages

SEOUL

首尔半导体

LY621

Infrared LAMP LED

文件:285.42 Kbytes Page:13 Pages

SEOUL

首尔半导体

LY621

RED OVAL LAMP LED

文件:392.32 Kbytes Page:14 Pages

SEOUL

首尔半导体

LY621

RED OVAL LAMP LED

文件:392.32 Kbytes Page:14 Pages

SEOUL

首尔半导体

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

来扬科技

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

lyontek

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LY621产品属性

  • 类型

    描述

  • 型号

    LY621

  • 制造商

    SEOUL

  • 制造商全称

    Seoul Semiconductor

  • 功能描述

    BLUE OVAL LAMP LED

更新时间:2025-11-23 22:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LYONTEK
24+
SOP32
30000
房间原装现货特价热卖,有单详谈
LYONTEK
22+
SOP32
100000
代理渠道/只做原装/可含税
LY
24+
NA/
17
优势代理渠道,原装正品,可全系列订货开增值税票
LYONTEK
25+
SOP32
54658
百分百原装现货 实单必成
LYONTEK
25+
SOP32
880000
明嘉莱只做原装正品现货
LYONTEK
25+23+
SOP
19123
绝对原装正品全新进口深圳现货
LYONTEK来扬
2023+
TSOP32
6893
专注全新正品,优势现货供应
LYONTEK
22+
SOP-32
3000
原装正品,支持实单
LYONTEK
2025+
SOP32
4500
原装进口价格优 请找坤融电子!
LYONTEK
17+
SOP32
6200
100%原装正品现货

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