InGaP HBT 2.4 - 2.5 GHz Power Amplifier

DESCRIPTION The LX5518 is a high gain and high power amplifier optimized for 802.11b/g/n applications in the 2.4-2.5GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching, and output pre-matching.

2.4GHz PA, 3.3-5V, 3x3x0.9mm

InGaP HBT 2.4 - 2.5 GHz Power Amplifier

DESCRIPTION The LX5518 is a high gain and high power amplifier optimized for 802.11b/g/n applications in the 2.4-2.5GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching, and output pre-matching.

封装/外壳：16-QFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF AMP 802.11B/G/N 2.4GHZ RF/IF，射频/中频和 RFID 射频放大器

High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

High-Current, High-Performance DrMOS Power Module

General Description The AOZ5518QI is a high efficiency synchronous buck power stage module consisting of two asymmetrical MOSFETs and an integrated driver. The MOSFETs are individually optimized for operation in the synchronous buck configuration. The High-Side MOSFET is optimized to achieve

High Current Chokes

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POWER MOS 7 R FREDFET

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POWER MOS 7 FREDFET

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