InGaP HBT 4.5 - 6GHz Power Amplifier

The LX5506 is a power amplifier designed for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.95 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and co

InGaP HBT 4.5 - 6GHz Power Amplifier

InGaP HBT 4 6GHz Power Amplifier

The LX5506B is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on

InGaP HBT 4 6GHz Power Amplifier

The LX5506B is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on

InGaP HBT 4 - 6GHz Power Amplifier

The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on

Legacy Power Management

Key Features:Advanced InGaP HBT4.9-5.85GHz OperationSingle-Polarity 3.3V SupplyTotal Current ~ 200mA for Pout=19dBm at 5.25GHzP1dB > +26dBm Power Gain ~ 23dB at 5.25GHz & Pout=19dBmEVM ~ 3% for 64QAM/ 54Mbps & Pout=19dBmIntegrated Power DetectorsOn-Chip Input MatchSimple Output MatchMinimal Exte

InGaP HBT 4 - 6GHz Power Amplifier

The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on

WLAN Power Amplifiers (PA)

For new designs consider the LX5530LQ.The LX5506 is a power amplifier designed for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.95 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated ci ·Advanced InGaP HBT\n·Single-Polarity Voltage Supply\n·EVM ~ 3% at Pout=18dBm for 64QAM/ 54Mbps OFDM(3.3V)\n·EVM ~ 3% at Pout=21dBm for 64QAM/ 54Mbps OFDM(4.5V)\n·P1dB ~ +26dBm(3.3V)\n·P1dB ~ +28.5dBm(4.5V)\n·Power Gain ~ 23dB at 5.25GHz for Icq~100mA\n·Power Gain ~ 21dB at 5.85GHz for Icq~1;

InGaP HBT 4.5 - 6GHz Power Amplifier

DESCRIPTION The LX5506M is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2, and Japan’s WLAN applications in the 4.9-5.9 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with

包装：带 描述：IC RF AMP 802.11A 4.5GHZ-6GHZ RF/IF，射频/中频和 RFID 射频放大器

InGaP HBT 4.5 ??6GHz Power Amplifier

文件：74.13 Kbytes Page：2 Pages

InGaP HBT 4.5 ??6GHz Power Amplifier

文件：74.13 Kbytes Page：2 Pages

InGaP HBT 4.5 ??6GHz Power Amplifier

文件：74.13 Kbytes Page：2 Pages

InGaP HBT 4.5 ??6GHz Power Amplifier

文件：74.13 Kbytes Page：2 Pages

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N