丝印代码：LVDS116；16-PORT LVDS REPEATER

FEATURES · One Receiver and Sixteen Line Drivers Meet or Exceed the Requirements of ANSI EIA/TIA-644 Standard · Typical Data Signaling Rates to 400 Mbps or Clock Frequencies to 400 MHz · Enabling Logic Allows Separate Control of Each Bank of Four Channels or 2-Bit Selection of Any One of t

丝印代码：LVDS116；16-PORT LVDS REPEATER

FEATURES · One Receiver and Sixteen Line Drivers Meet or Exceed the Requirements of ANSI EIA/TIA-644 Standard · Typical Data Signaling Rates to 400 Mbps or Clock Frequencies to 400 MHz · Enabling Logic Allows Separate Control of Each Bank of Four Channels or 2-Bit Selection of Any One of t

丝印代码：LVDS116；16-PORT LVDS REPEATER

FEATURES · One Receiver and Sixteen Line Drivers Meet or Exceed the Requirements of ANSI EIA/TIA-644 Standard · Typical Data Signaling Rates to 400 Mbps or Clock Frequencies to 400 MHz · Enabling Logic Allows Separate Control of Each Bank of Four Channels or 2-Bit Selection of Any One of t

丝印代码：LVDS116；16-PORT LVDS REPEATER

FEATURES · One Receiver and Sixteen Line Drivers Meet or Exceed the Requirements of ANSI EIA/TIA-644 Standard · Typical Data Signaling Rates to 400 Mbps or Clock Frequencies to 400 MHz · Enabling Logic Allows Separate Control of Each Bank of Four Channels or 2-Bit Selection of Any One of t

丝印代码：LVDS116；16-PORT LVDS REPEATER

FEATURES · One Receiver and Sixteen Line Drivers Meet or Exceed the Requirements of ANSI EIA/TIA-644 Standard · Typical Data Signaling Rates to 400 Mbps or Clock Frequencies to 400 MHz · Enabling Logic Allows Separate Control of Each Bank of Four Channels or 2-Bit Selection of Any One of t

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS