丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

LOW VOLTAGE HIGH SPEED IEEE1284 TRANSCEIVER

文件：217.61 Kbytes Page：11 Pages

Silicon MOS IC

Silicon NPN Transistor VHF-UHF Amplifier, Mixer/Osc

Features:
High Current Gain–Bandwidth Product: fT = 600MHz (Min) @ f = 100MHz
Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

POWER TRANSISTORS(10A,320-380V,125W)

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages