丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

丝印代码：LVC161284；19-BIT BUS INTERFACE

1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed for the IEEE Std 1284-I (Level 1 Type) and IEEE Std 1284-II (Leve

LOW VOLTAGE HIGH SPEED IEEE1284 TRANSCEIVER

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Flat cylinder

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