UHF HYPERABRUPT TUNING DIODES

UHF HYPERABRUPT TUNING DIODES • Application frequencies up to 800 MHz • Linear tuning capability between 3 and 8 volts • Diode capacitance ranges from 10.5 to 31 pF support higher application frequencies

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM

GaAlAs on GaAs Infrared Light Emitting Diode

GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 6 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● ø3 plastic package

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER

DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 2 500