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型号	功能描述	生产厂家企业	LOGO
LV2102	UHF HYPERABRUPT TUNING DIODES UHF HYPERABRUPT TUNING DIODES • Application frequencies up to 800 MHz • Linear tuning capability between 3 and 8 volts • Diode capacitance ranges from 10.5 to 31 pF support higher application frequencies	KNOX	KNOX
LV2102	UHF HYPERABRUPT TUNING DIODES	KNOX	KNOX
LV2102A	UHF HYPERABRUPT TUNING DIODES UHF HYPERABRUPT TUNING DIODES • Application frequencies up to 800 MHz • Linear tuning capability between 3 and 8 volts • Diode capacitance ranges from 10.5 to 31 pF support higher application frequencies	KNOX	KNOX
NTE2102	Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Cha	NTE	NTE
NJM2102	SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages	NJRC 日本无线	NJRC
NJM2102D	SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages	NJRC 日本无线	NJRC
NJM2102L	SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages	NJRC 日本无线	NJRC
NJM2102M	SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages	NJRC 日本无线	NJRC

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