HF HYPERABRUPT TUNING DIODES

HF HYPERABRUPT TUNING DIODES • Extremely high capacitance ratios provide frequency tuning up to 4:1 • Linear performance is achieved between 1.5 and 4 volts • Diode capacitance values ranging from 46 to 350 pF • Designed for use at frequencies up to 100 MHZ

丝印代码：M1501；1.6 GHz GaAs LOW NOISE AMPLIFIER

The MRFIC1501 is a low cost yet high performance two–stage, low–noise amplifier designed primarily for use in Global Positioning Satellite System (GPS) and other L–band satellite receivers. The broadband nature of the design makes the device applicable to a variety of L–band applications where hig

N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

PLLatinumTM 1.1 GHz Frequency Synthesizer for RF Personal Communications

文件：367.82 Kbytes Page：22 Pages

PLLatinumTM 1.1 GHz Frequency Synthesizer for RF Personal Communications

文件：367.82 Kbytes Page：22 Pages