Ceramic Filter

文件：33.05 Kbytes Page：1 Pages

TEMPERATURE COEFFICIENT OF CENTER FREQUENCY SHALL BE DEFINED AS THE AVERAGE OF THE CENTRAL FREQUECY.

文件：186.8 Kbytes Page：7 Pages

TEMPERATURE COEFFICIENT OF CENTER FREQUENCY SHALL BE DEFINED AS THE AVERAGE OF THE CENTRAL FREQUECY.

文件：186.8 Kbytes Page：7 Pages

通讯设备用陶瓷滤波器 （贴片型）

通讯设备用陶瓷滤波器 （贴片型）

TEMPERATURE COEFFICIENT OF CENTER FREQUENCY SHALL BE DEFINED AS THE AVERAGE OF THE CENTRAL FREQUECY.

文件：186.8 Kbytes Page：7 Pages

TEMPERATURE COEFFICIENT OF CENTER FREQUENCY SHALL BE DEFINED AS THE AVERAGE OF THE CENTRAL FREQUECY.

文件：186.8 Kbytes Page：7 Pages

通讯设备用陶瓷滤波器 （贴片型）

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW

Linear Output Type OPIC Light Detector

■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt