100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch

GENERAL DESCRIPTION The LT8418 is a 100V half-bridge GaN driver that integrates top and bottom driver stages, driver logic control, and protections. It can be configured into synchronous half-bridge, full-bridge topologies, or buck, boost, and buck-boost topologies. The LT8418 provides strong cur

150V Half Bridge Driver with Adaptive Shoot-Through Protection

FEATURES 150V Maximum Input Voltage Independent of IC Supply Voltage VCC 6V to 14V VCC and Bottom Gate Driver Voltage 4V to 14V Top Gate Driver Voltage 1.3Ω Pull-Down, 1.6Ω Pull-Up Adaptive Shoot-Through Protection Three-State PWM Input with Enable Pin VCC UVLO and Floating Supply UV

100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time

文件：2.22961 Mbytes Page：18 Pages

Six-Phase, Synchronous Bidirectional Buck or Boost Controller

文件：1.35047 Mbytes Page：48 Pages

Quad-Phase, Synchronous Bidirectional Buck or Boost Controller

文件：2.31803 Mbytes Page：48 Pages

150V Dual High-Side MOSFET Gate Driver

文件：617.96 Kbytes Page：14 Pages

封装/外壳：12-TSSOP（0.118"，3.00mm 宽）裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：100V HALF BRIDGE DRIVER W/ FLOAT 集成电路（IC） 全半桥驱动器

封装/外壳：12-TSSOP（0.118"，3.00mm 宽）裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：100V HALF BRIDGE DRIVER 集成电路（IC） 全半桥驱动器

100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time

文件：2.22961 Mbytes Page：18 Pages

100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time

文件：2.22961 Mbytes Page：18 Pages

100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time

文件：2.22961 Mbytes Page：18 Pages

100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time

文件：2.22961 Mbytes Page：18 Pages

100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time

文件：2.22961 Mbytes Page：18 Pages

100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time

文件：2.22961 Mbytes Page：18 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 14mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

Integrated Circuit NTSC Single Chip Color TV Signal Processor

Description: The NTE7060 is an integrated circuit in a 52–Lead DIP type package that combines all of the signal (VIF, SIF, Video, Color and Synchronous Signal) processing circuits in NTSC color TV onto one chip. Features: • VIF Circuit using PLL Complete Synchronous Detection • Audio