Photo DMOS-FET Relay

Description The LT838 is a 1-Form A solid state relay in an 6 pin DIP package that employs optically coupled MOSFET technology to provide 3750V/5000V of input to output isolation. The optically coupled input is controlled by a highly efficient GaAlAs infrared LED and MOS FETs on the output sid

光电继电器

光电继电器(光耦继电器or.光继电器.光藕合继电器)可适用於交流和直流，是信赖度相当高的产品，具备许多特点诸如：半永久性、低驱动电流、高绝缘耐压、超小型、光传输、非机械式接点 .... 等等。其可被应用於量测仪器、电信、保全、医疗设备…等。为了拓展应用领域，开发多样功能、更多接点、低电容和低阻抗等产品是我们未来的主要目标。 • SOP、DIP、SMD Package in miniature design\n\n• Low driver power requirements\n\n(TTL / CMOS compatible)\n\n• High reliability ˙Arc-Free with no snubbing circuits\n\n• 1500/3750/5000Vrms input / output isolation\n\n• Tape & Reel version available\n\n• UL approved no. E222222;

60V、3A Silent Switcher同步升压LED驱动器

LT8386是一款单片式同步升压DC-DC转换器，采用固定频率、峰值电流控制并为LED串提供PWM调光。LED电流通过CTRL引脚上的模拟电压或数字脉冲进行编程设定。LT8386通过外部感测电阻在宽输出电压范围内保持2%的电流调节能力。\n\n LT8386采用Silent Switcher®技术，旨在以高效率较大限度地减少EMI/EMC辐射。开关频率可通过RT引脚上连接的外部电阻或SYNC/SPRD引脚上的外部时钟，在200kHz至2MHz范围内进行编程。当可选的展频功能使能时，频率在100%至125%范围内变化以减少EMI。\n\n LT8386 • 2% LED 电流调节\n\n• 2.5% 输出电压调节\n\n• 在 100Hz 频率下可实现 50,000:1 PWM 调光\n\n• 512:1 内部 PWM 调光\n\n• 展频(SSFM)\n\n• 适用于超低 EMI 的 Silent Switcher 架构\n\n• 可在升压、降压以及降压-升压模式下工作\n\n• 4V 至 56V 输入电压范围;

60V, 3A Silent Switcher Synchronous, Step-Up LED Driver

文件：2.73647 Mbytes Page：28 Pages

丝印代码：8386；60V, 3A Silent Switcher Synchronous, Step-Up LED Driver

文件：2.73647 Mbytes Page：28 Pages

封装/外壳：28-TFQFN 裸露焊盘，14 引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC LED DRVR RGLTR PWM 3A 28LQFN 集成电路（IC） LED 驱动器

丝印代码：8386；60V, 3A Silent Switcher Synchronous, Step-Up LED Driver

文件：2.73647 Mbytes Page：28 Pages

丝印代码：8386；60V, 3A Silent Switcher Synchronous, Step-Up LED Driver

文件：2.73647 Mbytes Page：28 Pages

封装/外壳：28-TFQFN 裸露焊盘，14 引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC LED DRVR RGLTR PWM 3A 28LQFN 集成电路（IC） LED 驱动器

丝印代码：8386；60V, 3A Silent Switcher Synchronous, Step-Up LED Driver

文件：2.73647 Mbytes Page：28 Pages

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • -8 A, -20 V.

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

NPN (FM RADIO RF AMP, MIX, CONV, OSC, IF AMP)

FM RADIO RF AMP, MIX, CONV, OSC , IF AMP High Current Gain Banwidth Product ft= 250MHz(Typ)

ABRUPT VARACTOR DIODES

ABRUPT VARACTOR DIODES