Photo DMOS-FET Relay

Description The LT836 is a 1-Form A solid state relay in an 6 pin DIP package that employs optically coupled MOSFET technology to provide 3750V/5000V of input to output isolation. The optically coupled input is controlled by a highly efficient GaAlAs infrared LED and MOS FETs on the output sid

光电继电器

光电继电器(光耦继电器or.光继电器.光藕合继电器)可适用於交流和直流，是信赖度相当高的产品，具备许多特点诸如：半永久性、低驱动电流、高绝缘耐压、超小型、光传输、非机械式接点 .... 等等。其可被应用於量测仪器、电信、保全、医疗设备…等。为了拓展应用领域，开发多样功能、更多接点、低电容和低阻抗等产品是我们未来的主要目标。 • SOP、DIP、SMD Package in miniature design\n\n• Low driver power requirements\n\n(TTL / CMOS compatible)\n\n• High reliability ˙Arc-Free with no snubbing circuits\n\n• 1500/3750/5000Vrms input / output isolation\n\n• Tape & Reel version available\n\n• UL approved no. E222222;

具 2A、60V 开关的低 IQ 升压 / SEPIC / 负输出转换器

LT8362 是一款电流模式 DC/DC 转换器，具有一个 60V、2A 开关和工作在 2.8V 至 60V 输入范围。凭借独特的单反馈引脚架构，该器件能够以升压、SEPIC、反激式或负输出配置。突发模式操作消耗低至 9μA 静态电流，以在非常低的输出电流条件下保持高效率，同时把典型输出纹波保持在低于 15mV。\n\n 一个外部补偿引脚可在很宽的输入和输出电压范围以及 300kHz 至 2MHz 的可编程开关频率实现环路带宽的优化。一个 SYNC/MODE 引脚允许同步至一个外部时钟。它也可用于在突发或脉冲跳跃操作模式 (带或不带用于实现低 EMI 的扩展频谱频率调制功能) 之间进 • 宽输入电压范围：2.8V至60V\n\n• 超低静态电流和低纹波突发工作模式(Burst Mode®)：IQ = 9µA\n\n• 2A、60V电源开关\n\n• 集成单反馈引脚的正或负输出电压编程\n\n• 可编程频率（300kHz至2MHz）\n\n• 可与外部时钟同步;

40V, 9A, Low IQ Synchronous Step-Up Silent Switcher with Input Disconnect and PassThru

FEATURES  Silent Switcher™ Architecture  Ultralow EMI Emissions  Optional Spread Spectrum Frequency Modulation  Integrated 40V, 9A Power Switches  Output Short Protection/Inrush Current Reduction  Wide Input Voltage Range: 2.8V to 40V  Output Voltage Programmable up to 36V  Option

40V, 9A, Low IQ Synchronous Step-Up Silent Switcher with Input Disconnect and PassThru

FEATURES  Silent Switcher™ Architecture  Ultralow EMI Emissions  Optional Spread Spectrum Frequency Modulation  Integrated 40V, 9A Power Switches  Output Short Protection/Inrush Current Reduction  Wide Input Voltage Range: 2.8V to 40V  Output Voltage Programmable up to 36V  Option

具 4A、60V 开关的低 IQ 升压 / SEPIC / 负输出转换器

LT8364 是一款电流模式 DC/DC 转换器，其具有一个 60V、4A 开关和工作在 2.8V 至 60V 的输入范围。凭借独特的单反馈引脚架构，该器件能够以升压、SEPIC 或负输出配置。突发模式操作消耗低至 9μA 静态电流以在非常低的输出电流条件下保持高效率，同时把典型输出纹波保持在低于 15mV。\n\n 一个外部补偿引脚可在很宽的输入和输出电压范围以及 300kHz 至 2MHz 的可编程开关频率实现环路带宽的优化。一个 SYNC/MODE 引脚允许同步至一个外部时钟。另外，它还可用于在突发或脉冲跳跃操作模式 (带或不带用于实现低 EMI 的扩展频谱频率调制功能) 之间 • 宽输入电压范围：2.8V 至 60V \n\n• 超低静态电流和低纹波突发模式 (Burst Mode®) 操作：IQ = 9μA\n\n• 4A、60V 电源开关\n\n• 集成单反馈引脚的正或负输出电压编程\n\n• 可编程的频率 (300kHz 至 2MHz)\n\n• 可与外部时钟同步;

Low IQ Boost/SEPIC/ Inverting Converter with 2A, 100V Switch

文件：1.75695 Mbytes Page：28 Pages

Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

封装/外壳：16-TFSOP（0.118"，3.00mm 宽）12 引线，裸露焊盘 功能：升压 包装：管件 描述：IC REG BST SEPIC 2A 16MSOP 集成电路（IC） 稳压器 - DC-DC 开关稳压器

封装/外壳：16-TFSOP（0.118"，3.00mm 宽）12 引线，裸露焊盘 功能：升压 包装：卷带（TR） 描述：IC REG BST SEPIC 2A 16MSOP 集成电路（IC） DC DC 开关稳压器

Low IQ Boost/SEPIC/ Inverting Converter with 2A, 60V Switch

文件：2.35691 Mbytes Page：32 Pages

40V, 1.2A Micropower Synchronous Boost Converter with PassThru

文件：1.63716 Mbytes Page：20 Pages

28V, 5A Low IQ Synchronous Step-Up Silent Switcher with PassThru

文件：1.9815 Mbytes Page：24 Pages

Low IQ Boost/SEPIC/Inverting Converter with 5A, 40V Switch

文件：1.52062 Mbytes Page：24 Pages

60V 2MHz Low-IQ Boost, SEPIC and Flyback Controller

文件：2.88992 Mbytes Page：34 Pages

Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

Low IQ Boost/SEPIC/Inverting Regulator

文件：509.48 Kbytes Page：6 Pages

28V, 5A Low IQ Synchronous Step-Up Silent Switcher with PassThru

文件：1.9815 Mbytes Page：24 Pages

Low IQ Boost/SEPIC/Inverting Converter with 5A, 40V Switch

文件：1.52062 Mbytes Page：24 Pages

60V 2MHz Low-IQ Boost, SEPIC and Flyback Controller

文件：2.88992 Mbytes Page：34 Pages

Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

Four-Channel Transimpedance Amplifier with Output Multiplexing

文件：3.60123 Mbytes Page：34 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

丝印代码：8365；Low IQ Boost/SEPIC/Inverting Converter with 1.5A, 150V Switch

文件：2.22115 Mbytes Page：30 Pages

P-Channel 2.5V Specified MOSFET

General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performa

Linear Integrated Circuit TV Horizontal Processor

Description: The NTE836 is a TV Horizontal Processor in an 8–Lead DIP type package that includes a phase detector, oscillator and pre–driver. This device is designed for use in all types of television receivers that have negative flyback inputs. Features: • Internal Shunt Regulator •

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH

DESCRIPTION The TS836 ultra low power integrated circuit incorporates a high stability band-gap voltage reference and a comparator with open drain output. The threshold voltage is set at 4.5V for TS836-4 by internal thermally matched resistances. The comparator exhibits a 20µs response (with 10

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

MicroConverter, Dual 16-Bit/24- Bit ADCs with Embedded 62 kB Flash MCU

文件：1.43798 Mbytes Page：80 Pages