28V, 2A Ideal Diode and Load Switch

FEATURES  Internal 200mΩ Power Path  Wide Operating Voltage Range: 1.9V to 28V  Reverse Current Protection  Load Switch Capability  Low 10μA Quiescent Current  Fast 3μs Response to Load Steps  Low 500nA Off State Current  Smooth Switchover in Diode-OR Applications  Integrated The

28V, 4A Ideal Diode

FEATURES  Internal 50mΩ Power Path  Wide Operating Voltage Range: 1.9V to 28V  Reverse Current Protection  Low 10μA Quiescent Current  Fast 3μs Response to Load Steps  Low 500nA Off State Current  Smooth Switchover in Diode-OR Applications  10-Lead (3mm x 2mm x 0.75mm) LDFN Package

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sou

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sou

N-Channel 20-V (D-S) MOSFET

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