8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● 150 °C Junction Temperature ● VRRM 35 to 45 Volts ● High Current Capability

Diode Schottky 2-Pin 8.0A, 40V, VF=0.52V SMCG T/R

Schottky Barrier Rectifier. Guard Ring Protection. Low Forward Voltage. High Current Capability. Schottky Barrier Rectifier\n Guard Ring Protection\n Low Forward Voltage\n 150⁰C Junction Temperature\n VRRM 35 to 45 Volts\n High Current Capability;

Si Schottky Rectifier Diodes

8A,35V-45V low Vf Schottky rectifier in either J lead or gull wing SMC surface mount package

Si Schottky Rectifier Diodes

8A,35V-45V low Vf Schottky rectifier in either J lead or gull wing SMC surface mount package

封装/外壳：DO-215AB，SMC 鸥翼 包装：卷带（TR） 描述：DIODE SCHOTTKY 40V 8A DO215AB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-214AB，SMC 包装：托盘 描述：DIODE SCHOTTKY 40V 8A DO214AB 分立半导体产品 二极管 - 整流器 - 单

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T

RF POWER TRANSISTOR NPN SILICON

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ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

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