丝印代码：LS312；SINGLE-CHANNEL SMART LOAD SWITCH

Features • Advanced Controller with Charge Pump • Integrated N-Channel MOSFET with Ultra-Low RON • Input-Voltage Range 0.5V to 20V • Soft-Start via Controlled Slew Rate • Adjustable Slew Rate Control • Power-Good Signal • Thermal Shutdown • VCC Undervoltage Lockout • Short-Circuit Protect

丝印代码：LS312；SINGLE CHANNEL SMART LOAD SWITCH

Features  Advanced Controller with Charge Pump  Integrated N-Channel MOSFET with Ultra-Low RON  Input Voltage Range 0.5V to 20V  Soft-Start via Controlled Slew Rate  Adjustable Slew Rate Control  Power Good Signal  Thermal Shutdown  VCC Undervoltage Lockout  Short-Circuit Protect

丝印代码：LS312；SINGLE CHANNEL SMART LOAD SWITCH

Features  Advanced Controller with Charge Pump  Integrated N-Channel MOSFET with Ultra-Low RON  Input Voltage Range 0.5V to 20V  Soft-Start via Controlled Slew Rate  Adjustable Slew Rate Control  Power Good Signal  Thermal Shutdown  VCC Undervoltage Lockout  Short-Circuit Protect

丝印代码：LS312；SINGLE-CHANNEL SMART LOAD SWITCH

Features • Advanced Controller with Charge Pump • Integrated N-Channel MOSFET with Ultra-Low RON • Input-Voltage Range 0.5V to 20V • Soft-Start via Controlled Slew Rate • Adjustable Slew Rate Control • Power-Good Signal • Thermal Shutdown • VCC Undervoltage Lockout • Short-Circuit Protect

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FEATURES VERY HIGH GAIN hFE ≥ 200 @ 10µA-1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA

MONOLITHIC DUAL NPN TRANSISTORS

FEATURES VERY HIGH GAIN hFE ≥ 200 @ 10µA-1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA

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