LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET

FEATURES LOW DRIFT |V GS1-2 / T| = 10µV/°C TYP. LOW NOISE en = 6nV/Hz @ 10Hz TYP. LOW PINCHOFF Vp = 2.5V TYP.

包装：盒 描述：SENSOR RETROREFLECTVE NPN OPEN 传感器，变送器 光学传感器 - 光电，工业

LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

包装：盒 描述：SENSOR RETROREFLECTIVE PNP QD 传感器，变送器 光学传感器 - 光电，工业

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages