丝印代码：LR9343；-60V P-Channel MOSFET

Description Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repet

丝印代码：LR9343；P-Channel Enhancement Mode MOSFET

Features * Vos =60VIo =-14A Roscn 88mQ @ Vos=-10v (TYP) Rosiow 120m Q @ Vos=-4.5V (TYP)

T-1 Bi-Pin Base (.050)

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DIGITAL AUDIO MOSFET

VDS -55 V RDS(ON) typ. @ VGS = -10V 93 mΩ RDS(ON) typ. @ VGS = -4.5V 150 mΩ Qg typ. 31 nC TJ max 175 °C Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistan

DIGITAL AUDIO MOSFET

VDS -55 V RDS(ON) typ. @ VGS = -10V 93 mΩ RDS(ON) typ. @ VGS = -4.5V 150 mΩ Qg typ. 31 nC TJ max 175 °C Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistan

DIGITAL AUDIO MOSFET

文件：190.32 Kbytes Page：7 Pages

DIGITAL AUDIO MOSFET

文件：208.7 Kbytes Page：7 Pages