VDS -55 V

RDS(ON) typ. @ VGS = -10V 93 mΩ

RDS(ON) typ. @ VGS = -4.5V 150 mΩ

Qg typ. 31 nC

TJ max 175 °C

Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

Features

● Advanced Process Technology

● Key Parameters Optimized for Class-D Audio Amplifier Applications

● Low RDSON for Improved Efficiency

● Low Qg and Qsw for Better THD and Improved Efficiency

● Low Qrr for Better THD and Lower EMI

● 175°C Operating Junction Temperature for Ruggedness

● Repetitive Avalanche Capability for Robustness and Reliability

● Multiple Package Options