250 Watt AC-DC Power Supplies

The LPS250 series of enclosed AC-DC power supplies comprises four single output models, providing standard voltages of 5 V, 12 V, 15 V or 24 V. Each model also provides 5 V standby and two 12 V fan outputs. The power supplies accept a universal input of 85–264 Vac or 120–300 Vdc and have a typical f ·DC power good\n·Cover -C\n·Optional end fan cover -CEF\n·Overload protection\n·120 kHz switching frequency\n·Thermal overload protection\n·Overvoltage protection\n·2 Supervisory outputs5 V and 12 V\n·Low output ripple\n·Built-in EMI filter\n·Single wire current sharing\n·Power fail\n·Optional top w;

描述：AC/DC CONVERTER 24V 250W 电源 - 外部/内部（板外） AC DC 转换器

250 Watts

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PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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