HIGH PERFORMANCE LOW NOISE PHEMT

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HIGH PERFORMANCE LOW NOISE PHEMT

250 Watts

SPECIAL FEATURES  Medical and ITE safeties  Active power factor correction  3” x 5” footprint  Less than 1U high  EN61000-3-2 compliant  Remote sense  Power fail  Adjustable main output  Built-in Class B EMI filter  Overvoltage protection  Overload protection  Thermal overl

PACKAGED LOW NOISE PHEMT

DESCRIPTION AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au g

Medical and ITE safeties

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250 Watts Medical and ITE safeties

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Medical and ITE safeties

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Medical and ITE safeties

文件：791.37 Kbytes Page：3 Pages

250 Watts Medical and ITE safeties

文件：517.57 Kbytes Page：3 Pages

PACKAGED LOW NOISE PHEMT

Easy Identification and Tracing with 10-color Cable

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Resistant to tears and punctures

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100/200

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TOGGLE SWITCHES - SUB MINIATURE

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Bulk Metal® Foil Technology Conformally Coated Precision Current Sensing Resistors with TCR of 5 ppm/°C and values down to 5 mΩ

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