位置：首页 > IC中文资料第12914页 > LP721
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LP721 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re | POLYFET |   | |
LP721 | LDMOS SHORTFORM | POLYFET | | |
RF POWER LDMOS TRANSISTOR 文件：60.6 Kbytes Page：2 Pages | POLYFET | | ||
Schottky barrier double diodes DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • | PHILIPS 飞利浦 | | ||
Schottky barrier double diodes DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • | PHILIPS 飞利浦 | | ||
Schottky barrier double diodes DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • | PHILIPS 飞利浦 | | ||
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu | POLYFET | | ||
10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier 文件：459.36 Kbytes Page：15 Pages | NSC 国半 | |
LP721产品属性
- 类型
描述
- 型号
LP721
- 制造商
POLYFET
- 制造商全称
Polyfet RF Devices
- 功能描述
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LP |
08+ |
SOP28 |
483 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LP |
23+ |
SOP28 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
SANYO/三洋 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
ADI/亚德诺 |
22+ |
DIP |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
POLYFET |
2026+ |
AP |
65248 |
百分百原装现货 实单必成 |
|||
ADI/亚德诺 |
23+ |
DIP |
89630 |
当天发货全新原装现货 |
|||
LRC |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
LP |
22+ |
SOP28 |
20000 |
公司只做原装 品质保证 |
|||
KOA SPEER |
08+ |
0805- |
5000 |
||||
SANYO/三洋 |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
LP721规格书下载地址
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LP721数据表相关新闻
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2019-4-2LP8358-150毫安，UCap，低压差电源良好电压调节器
概述 LP8358是一个μCap，精确的CMOS电压稳压器低电源良好输出的RDSON。它提供高达150mA，消耗10nA的典型关断模式。 LP8358输出级设计一个推挽输出更快的瞬态响应恢复。LP8358是低价值，低成本的优化工作陶瓷电容器。输出通常只需要1μF的输出电容的稳定性。使能引脚可连接到输入电压为电路板的设计工作变得更为容易。LP8358是专为便携式，电池供电设备小空间要求的应用。LP8358是提供一个5引脚SOT- 23封装。性能被指定为-40 ° C至+125 ° C温度范围，是在一个固定的1.2V。其他输出电压选项，请联络美国国家半导体公司。
2013-1-19
DdatasheetPDF页码索引
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