GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 8 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● Wide directivity : θ = 25 deg. (typ

GaAs infrared light emitting diode For optical control systems

GaAs infrared light emitting diode For optical control systems ■ Features • High-power output, high-efficiency: Ie = 9 mW/sr (min.) • Emitted light spectrum is suited for silicon photodetectors • Good radiant power output linearity with respect to input current • Wide directivity: θ = 20° (t

GaAs infrared light emitting diode For optical control systems

GaAs infrared light emitting diode For optical control systems ■ Features • High-power output, high-efficiency: Ie = 9 mW/sr (min.) • Emitted light spectrum is suited for silicon photodetectors • Good radiant power output linearity with respect to input current • Wide directivity: θ = 20° (t

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For light source of remote control systems Features ● High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Narrow directivity : θ = 15 deg. (typ.) ● Transparent epoxy resin package

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency :PO = 8 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● Wide directivity : θ = 25 deg. (typ.

封装/外壳：T 1 3/4 包装：散装 描述：EMITTER IR 950NM 100MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

包装：散装 描述：EMITTER IR 950NM 50MA 光电器件 LED 发射器 - 红外，紫外，可见光