Dual Band GSM Power Controller

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封装/外壳：16-WFQFN 裸露焊盘 包装：带 描述：IC RF PWR CNTRL DUAL BAND 16WQFN RF/IF，射频/中频和 RFID RF 功率控制器 IC

Dual Band GSM Power Controller

文件：289.02 Kbytes Page：11 Pages

FOUR UA741 QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM148 consists of four independent, high gain internally compensated, low power operational amplifiers which have been designed to provide functional characteristics identical to those of the familiar UA741 operational amplifier. In addition the total supply current for all four a

FOUR UA741 QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM148 consists of four independent, high gain internally compensated, low power operational amplifiers which have been designed to provide functional characteristics identical to those of the familiar UA741 operational amplifier. In addition the total supply current for all four a

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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