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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LMG3426R030 | LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 |  |   |
LMG3426R030 | LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Texas Instruments |
23+/24+ |
54-VQFN |
8600 |
只供原装进口公司现货+可订货 |
|||
NS |
24+ |
TO-263 |
2987 |
绝对全新原装现货供应! |
|||
TI(德州仪器) |
23+ |
15000 |
专业帮助客户找货 配单,诚信可靠! |
||||
NSC |
2023+ |
SOP8 |
50000 |
原装现货 |
|||
TI |
25+ |
原封装 |
66330 |
郑重承诺只做原装进口现货 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
NS |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
|||
原厂正品 |
23+ |
DIP16 |
5000 |
原装正品,假一罚十 |
|||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
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LMG3426R030规格书下载地址
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2019-2-26
DdatasheetPDF页码索引
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