型号 功能描述 生产厂家 企业 LOGO 操作
LMG3411R150RWHT

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

TI

德州仪器

LMG3411R150RWHT

600-V 150-m廓 GaN With Integrated Driver And Protection

文件:786.3 Kbytes Page:28 Pages

TI

德州仪器

LMG3411R150RWHT

600-V 150-m(ohm) GaN with integrated driver and protection

文件:774.83 Kbytes Page:27 Pages

TI

德州仪器

LMG3411R150RWHT

封装/外壳:32-VQFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SMART 150MOHM GAN FET WITH DRIVE 集成电路(IC) 配电开关,负载驱动器

TI2

德州仪器

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

TI

德州仪器

600-V 150-m廓 GaN With Integrated Driver And Protection

文件:786.3 Kbytes Page:28 Pages

TI

德州仪器

600-V 150-m(ohm) GaN with integrated driver and protection

文件:774.83 Kbytes Page:27 Pages

TI

德州仪器

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

TI

德州仪器

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

TI

德州仪器

600-V 150-m(ohm) GaN with integrated driver and protection

文件:774.83 Kbytes Page:27 Pages

TI

德州仪器

600-V 150-m廓 GaN With Integrated Driver And Protection

文件:786.3 Kbytes Page:28 Pages

TI

德州仪器

更新时间:2025-9-30 18:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
2024+
QFN-32-EP(8x8)
500000
诚信服务,绝对原装原盘
TI/德州仪器
2450+
VQFN54
9850
只做原厂原装正品现货或订货假一赔十!
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI
24+
VQFN32
1000
市场最低 原装现货 假一罚百 可开原型号
TI/德州仪器
23+
32-VQFN
4257
原装正品代理渠道价格优势
TI
25+
VQFN (RWH)
6000
原厂原装,价格优势
TI/德州仪器
25+
32-VQFN
65248
百分百原装现货 实单必成
TI(德州仪器)
23+
VQFN-32
9990
原装正品,支持实单
TI
24+
VQFN32
39500
进口原装现货 支持实单价优
TI
23+
N/A
8000
只做原装现货

LMG3411R150RWHT数据表相关新闻