LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

600-V 70-m(ohm) GaN with Integrated Driver and Protection

文件：1.42382 Mbytes Page：33 Pages

封装/外壳：32-VQFN 裸露焊盘 包装：管件 描述：IC GAN FET DRIVER 集成电路（IC） 配电开关，负载驱动器

LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

600-V 70-m(ohm) GaN with Integrated Driver and Protection

文件：1.42382 Mbytes Page：33 Pages

LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design