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LMG价格
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型号：LMGGF5L0C 品牌：C&K Components 备注：这里有LMG多少钱，2025年最近7天走势，今日出价，今日竞价，LMG批发/采购报价，LMG行情走势销售排行榜，LMG报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LMG2100R026 100V, 53A GaN Half-Bridge Power Stage 1Features •Integratedhalf-bridgeGaNFETsanddriver •93Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofupto1 | TI1Texas Instruments 德州仪器 |  |   | |
LMG2100R026 100V, 53A GaN Half-Bridge Power Stage 1Features •Integratedhalf-bridgeGaNFETsanddriver •93Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofupto1 | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
LMG2100R026 100V, 53A GaN Half-Bridge Power Stage 1Features •Integratedhalf-bridgeGaNFETsanddriver •93Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofupto1 | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2100R026 100V, 53A GaN Half-Bridge Power Stage 1Features •Integratedhalf-bridgeGaNFETsanddriver •93Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofupto1 | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2100R044 100-V, 35-A GaN Half-Bridge Power Stage 1Features •Integrated4.4-mΩGaNFETsanddriver •80-Vcontinuous,100-Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •5-Vexternalbiaspowersupply •Supports3.3-V,5-Vand12-Vinputlogiclevels •Highslewrateswitchingwithlowringing •Gatedrivercapableofu | TI1Texas Instruments 德州仪器 | | | |
LMG2100R044 100V, 35A GaN Half-Bridge Power Stage 1Features •Integrated4.4mΩhalf-bridgeGaNFETsanddriver •90Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofu | TI1Texas Instruments 德州仪器 | | | |
LMG2100R044 100V, 35A GaN Half-Bridge Power Stage 1Features •Integrated4.4mΩhalf-bridgeGaNFETsanddriver •90Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofu | TI1Texas Instruments 德州仪器 | | | |
LMG2100R044 100V, 35A GaN Half-Bridge Power Stage 1Features •Integrated4.4mΩhalf-bridgeGaNFETsanddriver •90Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofu | TI1Texas Instruments 德州仪器 | | | |
LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2640 Integrated 650V GaN Half Bridge 1Features •650VGaNpower-FEThalfbridge •105mΩlow-sideandhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinterlock •High-sidegate-drivesignallevelshifter | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2640 Integrated 650V GaN Half Bridge 1Features •650VGaNpower-FEThalfbridge •105mΩlow-sideandhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinterlock •High-sidegate-drivesignallevelshifter | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2650 650V 95mΩ GaN Half Bridge with Integrated Driver and Current Sense Emulation 1Features •650VGaNpower-FEThalfbridge •95mΩlow-sideandhigh-sideGaNFETs •Integratedgatedriverswith | TI1Texas Instruments 德州仪器 | | | |
LMG2652 650V 140mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation 1Features •650VGaNpower-FEThalfbridge •140mΩlow-sideandhigh-sideGaNFETs •Integratedgatedriverswith | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG2652 650V 140mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation 1Features •650VGaNpower-FEThalfbridge •140mΩlow-sideandhigh-sideGaNFETs •Integratedgatedriverswith | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG3100R017 100V, 97A GaN FET With Integrated Driver 1Features •Integrated1.7mΩGaNFETanddriver •Interatedhigh-sidelevelshiftandbootstrap •TwoLGM3100canformahalf-bridge –Noexternallevelshifterneeded •90Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •5Vexternalbiaspowersupply •Su | TI1Texas Instruments 德州仪器 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TI1Texas Instruments 德州仪器 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TI1Texas Instruments 德州仪器 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TI1Texas Instruments 德州仪器 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TI1Texas Instruments 德州仪器 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver 1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600-VGaN-on-SiFETwithIntegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsCMTI –3.6-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceand | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –3.6MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | |
LMG产品属性
- 类型
描述
- 型号
LMG
- 制造商
Hitachi
- 功能描述
LCD MODULE VGA 4.7 MONO STN
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
24+ |
N/A |
11850 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
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TI(德州仪器) |
24+ |
QFN32EP(8x8) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
TI |
22+ |
32-VQFN |
5000 |
全新原装,力挺实单 |
|||
TI |
25+ |
VQFN (RWH) |
6000 |
原厂原装,价格优势 |
|||
Texas Instruments |
23+/24+ |
17-VQFN |
8600 |
只供原装进口公司现货+可订货 |
|||
TI(德州仪器) |
23+ |
VQFN-32(8x8) |
9990 |
原装正品，支持实单 |
|||
TI/德州仪器 |
24+ |
VQFN-32 |
9600 |
原装现货,优势供应,支持实单! |
|||
TI/德州仪器 |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NSC |
24+ |
SOP-16 |
2250 |
100%全新原装公司现货供应!随时可发货 |
LMG芯片相关品牌
LMG规格书下载地址
LMG参数引脚图相关
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- mb402
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- max3232cse
- max232cse
- max232
- m628
- m358
- m1s
- m1105
- lw26
- lvds
- lt15
- ls244
- ls163
- ls138
- LMH0050SQE/NOPB
- LMH0050
- LMH0046MH/NOPB
- LMH0046
- LMH0044SQE/NOPB
- LMH0044SQ/NOPB
- LMH0044
- LMH0041SQE/NOPB
- LMH0041
- LMH0040SQE/NOPB
- LMH0040
- LMH0036SQE/NOPB
- LMH0036
- LMH0034MA/NOPB
- LMH0034
- LMH0031VS/NOPB
- LMH0031
- LMH0030VS/NOPB
- LMH0030
- LMH0026MH/NOPB
- LMH0026
- LMH0024MA/NOPB
- LMH0024
- LMH0002TMA/NOPB
- LMH0002SQE/NOPB
- LMH0002SQ/S250
- LMH0002SQ/NOPB
- LMH0002MA/NOPB
- LMH0002
- LMH0001SQE/NOPB
- LMH0001SQ/NOPB
- LMH0001
- LMGGF5L0C
- LMG5200
- LMG3410
- LMG1210
- LMG1205
- LMG1020
- LMG04D
- LMG002
- LMF90
- LMF60
- LMF501
- LMF380
- LMF2AT502W0341
- LMF100CIWMX/NOPB
- LMF100CIWM/NOPB
- LMF100CIWM
- LMF100
- LME-M-G
- LME49990MAX/NOPB
- LME49990MA/NOPB
- LME49880MR/NOPB
- LME49870MA/NOPB
- LME49860NA/NOPB
- LME49860MA/NOPB
- LME49830TB/NOPB
- LME49811TB/NOPB
- LME49810TB/NOPB
- LME49743MT/NOPB
- LME49740NA/NOPB
- LME49740MAX/NOPB
- LME49740MA/NOPB
- LME49726MY/NOPB
- LME49725MA/NOPB
- LME1M
- LME1K
- LME1J
- LME1G
- LME1D
- LME1B
- LME1A
- LME12W
- LME11W
- LMDH74T
- LMDG81W
- LMDG20W
- LMDG12W
- LMDG11W
- LMDG08W
LMG数据表相关新闻
LMG1210RVRT LMG1210RVRR 封装WQFN-19 栅极驱动器 原装现货
LMG1210RVRTLMG1210RVRR封装WQFN-19栅极驱动器原装现货
2024-5-25LMG1025QDEETQ1
进口代理
2023-10-8LMG3411R050RWHR
LMG3411R050RWHR
2023-2-27LMDP 系列闩锁 Micro-D 连接器LMDP-021-N50-WD6Q18.0-1-RH/LMDP-512-N50-WD6Q18.0-1-RH
Omnetics的闩锁Micro-D连接器提供了安全的连接，而无需使用工具和顶升硬件
2020-7-9LMF8CCN，LNA110L，LNBH23，LNBH24T，LNBK20A，LNBK15SP
LMF8CCN，LNA110L，LNBH23，LNBH24T，LNBK20A，LNBK15SP
2020-2-28LMD18201T，PMIC-电机驱动器，控制器
全新原装，公司现货销售 品牌：TI 数量：5600pcs 参数： 电机类型-步进:双极性 电机类型-AC，DC:有刷直流 功能驱动器-全集成，控制和功率级 输出配置:半桥（2） 接口:并联 技术：Bi-CMOS，DMOS 步进分辨率- 应用：通用 电流-输出3A 电压-电源12V~55V 电压-
2019-2-26
DdatasheetPDF页码索引
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