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LCD Module User Manual

文件:609.9 Kbytes Page:11 Pages

TOPWAY

深圳拓普微

LCD Module User Manual

文件:540.66 Kbytes Page:11 Pages

TOPWAY

深圳拓普微

Discrete-MOSFETs

LeadpowerSemi

P-Channel Enhancement Mode Fieid Effect Transistor

文件:803.47 Kbytes Page:6 Pages

LEIDITECH

雷卯电子

Low Power 2.7V Single Supply CMOS Operational Amplifiers

文件:792.91 Kbytes Page:20 Pages

NSC

国半

LCD Module User Manual

文件:656.74 Kbytes Page:14 Pages

TOPWAY

深圳拓普微

Discrete-MOSFETs

LeadpowerSemi

LCD Module User Manual

文件:638.79 Kbytes Page:14 Pages

TOPWAY

深圳拓普微

LCD Module User Manual

文件:653.18 Kbytes Page:14 Pages

TOPWAY

深圳拓普微

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 1600 V Mean on-state current 720 A Surge current 8.8 kA

POSEICO

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 6.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package ha

PANJIT

強茂

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes)

SUPER FAST RECOVERY RECTIFIER VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters

PANJIT

強茂

TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

GENERAL DESCRIPTION Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brus

PHILIPS

飞利浦

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA602T • Automatic mounting

NEC

瑞萨

LM603产品属性

  • 类型

    描述

  • Package:

    TO-252-4L

  • Tj max (°C):

    150

  • Configuration:

    Complementary

  • Type:

    N+P

  • ESD Protect:

    NA

  • VDS (V):

    60

  • VGS(±V):

    20

  • ID (A):

    21.0

  • PD (W):

    33.0

  • Ron@10V(mΩ):

    38

  • Ron@4.5V(mΩ):

    44

  • VGS(th)(typV):

    1.8

  • VGS(th)(maxV):

    2.5

  • Ciss(pF):

    1

  • Coss(pF):

    52

  • Crss(pF):

    40

  • Qg*(nC)@4.5V:

    12.3

  • Qg*(nC)@10V:

    26

  • Qgs(nC):

    6.3

  • Qgd(nC):

    3.7

  • Trr(ns):

    14

  • Qrr(nC):

    9

更新时间:2026-5-24 14:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
雷卯-LEIDITECH
25+
TO-252
20300
雷卯-LEIDITECH原装特价LM6035D即刻询购立享优惠#长期有货

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