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LM358W价格
参考价格：￥1.4811
型号：LM358WDT 品牌：Rohm 备注：这里有LM358W多少钱，2026年最近7天走势，今日出价，今日竞价，LM358W批发/采购报价，LM358W行情走势销售排行榜，LM358W报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LM358W | Low Power Dual Operational Amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 |   | |
LM358W | Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | |
LM358W | 低功耗双运算放大器 | STMICROELECTRONICS 意法半导体 | | |
Low Power Dual Operational Amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
SILICON MONNOLITHIC INTEGRATED CIRCUIT Description The Universal Standard family LM358 / 324, LM2904 / 2902 monolithic ICs integrate two independent op-amps and phase compensation capacitors on a single chip and feature high-gain, low power consumption, and an operating voltage range of 3[V] to 32[V] (single power supply.) Features | ROHM 罗姆 | | ||
Low Power Dual Operational Amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low Power Dual Operational Amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
SILICON MONNOLITHIC INTEGRATED CIRCUIT Description The Universal Standard family LM358 / 324, LM2904 / 2902 monolithic ICs integrate two independent op-amps and phase compensation capacitors on a single chip and feature high-gain, low power consumption, and an operating voltage range of 3[V] to 32[V] (single power supply.) Features | ROHM 罗姆 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers Description These circuits consist of two independent, high gain, internally frequency-compensated which were designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. App | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
SIGNATURE SERIES Operational Amplifiers 文件：974.27 Kbytes Page：18 Pages | ROHM 罗姆 | | ||
Standard Ground Sense Operational Amplifier | ROHM 罗姆 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
SIGNATURE SERIES Operational Amplifiers 文件：974.27 Kbytes Page：18 Pages | ROHM 罗姆 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
SIGNATURE SERIES Operational Amplifiers 文件：974.27 Kbytes Page：18 Pages | ROHM 罗姆 | | ||
SIGNATURE SERIES Operational Amplifiers 文件：974.27 Kbytes Page：18 Pages | ROHM 罗姆 | | ||
Standard Ground Sense Operational Amplifier | ROHM 罗姆 | | ||
SIGNATURE SERIES Operational Amplifiers 文件：974.27 Kbytes Page：18 Pages | ROHM 罗姆 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low power dual operational amplifiers 文件：326.23 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation | MOTOROLA 摩托罗拉 | | ||
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation | MOTOROLA 摩托罗拉 | | ||
Low Power Dual Operational Amplifiers 文件：1.0094 Mbytes Page：25 Pages | NSC 国半 | | ||
Low Power Dual Operational Amplifiers 文件：1.0094 Mbytes Page：25 Pages | NSC 国半 | | ||
Low Power Dual Operational Amplifiers 文件：1.0094 Mbytes Page：25 Pages | NSC 国半 | |
LM358W产品属性
- 类型
描述
- 型号
LM358W
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
Low Power Dual Operational Amplifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
25+ |
N/A |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST/意法 |
25+ |
TSSOP8 |
32360 |
ST/意法全新特价LM358WST即刻询购立享优惠#长期有货 |
|||
Rohm Semiconductor |
22+ |
8SO |
9000 |
原厂渠道,现货配单 |
|||
ST |
26+ |
SOP-8 |
60000 |
只有原装 可配单 |
|||
RohmSemiconductor |
24+ |
8-SO |
8900 |
绝对原装假一赔十欢迎来电询价!0755-82789596不止网上 |
|||
ST/意法半导体 |
24+ |
Mini-SO-8 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
TI/德州仪器 |
24+ |
TSSOP8 |
1500 |
只供应原装正品 欢迎询价 |
|||
RohmSemicond |
23+ |
8-SOIC |
65600 |
||||
ST/意法半导体 |
25+ |
SO-8 |
2560 |
绝对原装公司现货 |
|||
TI |
25+ |
TSSOP8 |
30000 |
代理全新原装现货,价格优势 |
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LM358W规格书下载地址
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LM358W数据表相关新闻
LM358介绍：应用、参数、电路、原理、工作电流、放大系数、数据手册、模拟电路、应用范围、低功耗等
LM358是一种常用的双运放集成电路，具有广泛的应用范围和优秀的性能特点。在使用LM358时，需要注意其参数、电路、原理、工作电流、放大系数、数据手册、模拟电路、应用范围、低功耗等方面的内容。
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原装正品，价格优势，竭力为您服务 0755-88600196/QQ3007281353
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
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2019-5-30
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