Step-Down DC-DC Converter with Bypass Mode for CDMA / WCDMA RF Power Amplifiers

文件：3.14054 Mbytes Page：23 Pages

Step-Down DC-DC Converter

文件：3.13554 Mbytes Page：22 Pages

Step-Down DC-DC Converter with Bypass Mode for CDMA / WCDMA RF Power Amplifiers

文件：1.36028 Mbytes Page：15 Pages

具有旁通模式的微型、可调节、降压 DC-DC 转换器，用于射频功率放大器

LM3203 Step-Down DC-DC Converter with Bypass Mode for CDMA / WCDMA RF Power Amplifiers

文件：3.09543 Mbytes Page：22 Pages

Step-Down DC-DC Converter

文件：3.13554 Mbytes Page：22 Pages

Step-Down DC-DC Converter with Bypass Mode for CDMA / WCDMA RF Power Amplifiers

文件：1.36028 Mbytes Page：15 Pages

封装/外壳：10-WFBGA 功能：降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BUCK ADJ 500MA 10USMD 集成电路（IC） 稳压器 - DC-DC 开关稳压器

Step-Down DC-DC Converter

文件：3.13554 Mbytes Page：22 Pages

包装：盒 描述：BOARD EVALUATION LM3203TL 开发板，套件，编程器 评估板 - DC/DC 与 AC/DC（离线）SMPS

Step-Down DC-DC Converter

文件：3.13554 Mbytes Page：22 Pages

Step-Down DC-DC Converter with Bypass Mode for CDMA / WCDMA RF Power Amplifiers

文件：1.36028 Mbytes Page：15 Pages

Step-Down DC-DC Converter

文件：3.13554 Mbytes Page：22 Pages

Step-Down DC-DC Converter

文件：3.13554 Mbytes Page：22 Pages

2-Phase IMVP-II & IMVP-III Core Controller for Mobile CPUs

GENERAL DESCRIPTION The ADP3203 is a 1- or 2-phase hysteretic peak current dc-to-dc buck converter controller dedicated to power a mobile processor’s core. The optimized low voltage design is powered from the 3.3 V system supply and draws only 10 µA maximum in shutdown. The nominal output volta

Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURES • Complementary to KTA1271.

SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ener

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur