SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Reverse Recovery Time • Low Reverse Capacitance • Lead Free Finish, RoHS Compliant (Note 3)

Schottky Barrier Switching Diode

Features • Guard Ring Construction for Transient Protection • Low Reverse Capacitance • Low Forward Voltage Drop and Low Reverse Recovery Time • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates Compliant. See ordering information)

schottky barrier switching diode

Features • Low Reverse Recovery Time • Low Reverse Capacitance • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection

Schottky Barrier Switching Diode

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Small Signal Schottky Diodes

小信号肖特基二极管

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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SURFACE MOUNT SCHOTTKY BARRIER DIODE

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封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：散装 描述：DIODE SCHOTTKY 50V 15MA MINIMELF 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 50V 15MA MINIMELF 分立半导体产品 二极管 - 整流器 - 单

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Precision Wirewound Resistors

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Smooth, high torque, roller ratchet handle

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